Recrystallisation of CVD poly-Si on insulator by dual electron-beam processing

18 February 1982

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 18 (4) , 163-164
https://doi.org/10.1049/el:19820112

Abstract

Large areas of 〈100〉 oriented single-crystal films have been produced, using the lateral seeding technique, from polycrystalline silicon deposited on SiO₂. One electron beam was used to provide generalised substrate heating, and another swept a localised molten zone in the deposited silicon.

Keywords

LOCALISED MOLTEN ZONE
POLYCRYSTALLINE SI
SIO2
SUBSTRATE HEATING
CVD POLY-SI ON INSULATOR
DUAL ELECTRON-BEAM PROCESSING
RECRYSTALLISATION
SINGLE-CRYSTAL FILMS
SEMICONDUCTOR GROWTH
LATERAL SEEDING TECHNIQUE

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