Electroluminescent Devices with Ga2O3:Mn Thin-Film Emitting Layer Prepared by Sol-Gel Process
- 1 June 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (6A) , L524-526
- https://doi.org/10.1143/jjap.39.l524
Abstract
High-luminance electroluminescent devices have been newly developed using a Ga2O3:Mn thin film prepared by a sol-gel process. The sol-gel process, which eliminates the need for vacuum processes, enabled the inexpensive preparation of Ga2O3:Mn thin films on large-area thick ceramic sheet insulators. Gallium acethylacetonate, a relatively inexpensive and easy to handle material, was used as the Ga source material. Thin-film electroluminescent (TFEL) devices with a Ga2O3:Mn thin-film emitting layer prepared by the sol-gel process at a deposition temperature of 900°C and a postannealing temperature of 1000°C exhibited luminances of 1271 and 401 cd/m2 when driven at 1 kHz and 60 Hz, respectively.Keywords
This publication has 2 references indexed in Scilit:
- Electroluminescence with organic compoundsBerichte der Bunsengesellschaft für physikalische Chemie, 1996
- Materials Used in Electroluminescent DisplaysMRS Bulletin, 1996