Analysis of GaAs MOMBE Reactions by Mass Spectrometry
- 1 September 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (9A) , L1486
- https://doi.org/10.1143/jjap.28.l1486
Abstract
The thermal decomposition of trimethylgallium (TMG) under metal-organic molecular beam epitaxy (MOMBE) conditions is studied by mass spectrometry. For the first time, it is observed that the amount of Ga-containing species desorbed from the GaAs surface decreases above 350°C. Measurements on CH3, CH4 and C2H6 indicate that TMG pyrolyzes by releasing methyl radicals. The amount of Ga-containing species desorbed from the SiO2 surface does not show a steep decrease up to 530°C, which indicates that no thermal decomposition occurs on SiO2. This explains the mechanism of selective epitaxy in MOMBE.Keywords
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