Gate oxide damage from polysilicon etching

• 1 March 1991
• journal article
• Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
• Vol. 9  (2) , 370-373
• https://doi.org/10.1116/1.585578

Abstract

Keywords

• MATHEMATICAL MODEL
• ELECTRON CYCLOTRON RESONANCE
• RADIO FREQUENCY
• MOLECULAR MODELING