Induced base transistor fabricated by molecular beam epitaxy
- 1 September 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 7 (9) , 497-499
- https://doi.org/10.1109/EDL.1986.26451
Abstract
A novel three-terminal hot-electron device, the induced base transistor (IBT), has been fabricated by molecular beam epitaxy (MBE). Two-dimensional electron gas (2-DEG) induced by the applied collector field in an undoped GaAs quantum well is used as the base of the IBT. The common-base current gain α has been achieved as high as 0.96 under a collector bias of 2.5 V and an emitter current of 3 mA.Keywords
This publication has 0 references indexed in Scilit: