A two-layer microwave FET structure for improved characteristics

1 June 1977

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 24 (6) , 757-761
https://doi.org/10.1109/t-ed.1977.18817

Abstract

The characteristics of a proposed two-layer short-channel FET structure are analyzed and compared with those of the conventional structure. The new structure provides improved amplifier linearity and enhanced unity-current-gain frequency. Suitable combinations of doping in the two layers and gate-to-drain electrode separation can effectively reduce the device noise arising due to hot electrons.

Keywords

ELECTRODES
DOPING
VOLTAGE
SILICON
ACOUSTICAL ENGINEERING
NOISE REDUCTION
LINEARITY
FREQUENCY