(BAlGa)N quaternary system and epitaxial growth on (0001)6H-SiC substrate by low-pressure MO-VPE

6 June 1997

proceedings article
Published by SPIE-Intl Soc Optical Eng

Vol. 2994, 52-59
https://doi.org/10.1117/12.275585

Abstract

GaN and their alloy systems have a potential for the application of optical devices operating in blue and ultraviolet spectral region. In this paper, the possibility of (BAlGa)N quaternary system lattice matched to (0001) 6H- SiC substrate is described for ultraviolet emitters in the view of bandgap energy, lattice-matching to substrates. The estimated bandgap energy of quaternary system is ranging from 3.9 eV to 6.1 eV. It is also discussed that the crystal growth of (BAlGa)N systems using metalorganic vapor phase epitaxy. The quaternary system lattice-matched to (0001) 6H- SiC have an advantage for the laser application operating in ultraviolet spectral region.

Keywords

SILICON CARBIDE
VAPOR PHASE EPITAXY
CRYSTALS
GALLIUM NITRIDE
LASER APPLICATIONS
METALORGANIC CHEMICAL VAPOR DEPOSITION
OPTICAL COMPONENTS

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