Growth of dislocation-free GaAs crystals by nitrogen doping
- 1 October 1982
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 59 (3) , 669-671
- https://doi.org/10.1016/0022-0248(82)90394-3
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Dislocations in GaAsJournal of Crystal Growth, 1982
- Impurity effect on grown-in dislocation density of InP and GaAs crystalsJournal of Applied Physics, 1978
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965