Properties of ZnSe/ZnS grown by MOVPE on a rotating substrate

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Abstract
In this work we will report the growth of ZnSe and ZnS grown by atmospheric pressure MOVPE with a rotating substrate which allows a very good thickness homogeneity of the layers. As reactants diethylzinc dimethyizinc diethylselenide and H2S and as carrier gas H2 was used. High mobilities and low background doping concentrations (i3ooK 370 cm2/Vs n3(JK 7x 1014 cm3) sharp excitonic PL features and very thin (2nm) ZnS/ZnSe multilayer structures demonstrate the facilities of this growth technique.

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