Plasma enhanced chemical vapor deposition of HgTe–CdTe superlattices

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Abstract
Plasma enhanced chemical vapor deposition was used to grow epitaxial layers of cadmium telluride and mercury telluride from metalorganic compounds. High deposition rates were obtainable for both of the materials, and the plasma allowed epitaxial growth to occur at temperatures that were markedly lower than those required for the standard metalorganic deposition processes. Properties of the mercury telluride and cadmium telluride will be presented. Superlattices were grown at 150 °C that had 70 Å thick mercury telluride layers.

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