Ion implanted GaAs bipolar transistors
- 31 July 1980
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 16 (16) , 637-638
- https://doi.org/10.1049/el:19800442
Abstract
GaAs n-p-n bipolar transistors were fabricated by ion implanting Be and Se into bulk n-type substrate material. Devices with mesa collectors exhibit a d.c. current gain hFE ≃ 8 and a reverse bias leakage current of less than 10 nA.Keywords
This publication has 1 reference indexed in Scilit:
- Planar GaAs p-n junctions by Be ion implantationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977