Detection of the silylene ν2 band by infrared diode laser kinetic spectroscopy
- 15 October 1989
- journal article
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 91 (8) , 4582-4586
- https://doi.org/10.1063/1.456746
Abstract
The ν2 band of the silylene SiH2 molecule in X̃ 1 A1 was observed for the first time in the gas phase by using infrared diode laser kinetic spectroscopy. Silylene molecules were generated by the photolysis of phenylsilane at 193 nm. The observed spectrum was analyzed to determine the rotational and centrifugal distortion constants in the ground and v2 =1 states and the band origin ν0 =998.6241(3) cm−1 with one standard deviation in parentheses. The significance of the derived parameters is discussed in detail.Keywords
This publication has 32 references indexed in Scilit:
- Diffusion Coefficient and Reaction Rate Constant of the SiH3 Radical in Silane PlasmaJapanese Journal of Applied Physics, 1989
- Role of silylene in the pyrolysis of silane and organosilanesThe Journal of Physical Chemistry, 1988
- Measurement of the SiH3 Radical Density in Silane Plasma using Infrared Diode Laser Absorption SpectroscopyJapanese Journal of Applied Physics, 1988
- Mechanistic Studies of Chemical Vapor DepositionAnnual Review of Physical Chemistry, 1987
- The infrared spectrum of five isotopic forms of the SiH radical by laser magnetic resonanceMolecular Physics, 1987
- High-information infrared spectroscopy of unstable moleculesJournal of the Optical Society of America B, 1986
- Detection of the Silyl Radical Siby Infrared Diode-Laser SpectroscopyPhysical Review Letters, 1986
- The spectrum of natural hydrogen sulfide between 2150 and 2950 cm−1Canadian Journal of Physics, 1984
- Renner effect in SiH2Journal of the Chemical Society, Faraday Transactions 2: Molecular and Chemical Physics, 1975
- The absorption spectrum of the free SiH2 radicalCanadian Journal of Physics, 1968