High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm

This publication has 4 references indexed in Scilit:

• 0.25 µm gate-length, MBE-grown AlGaN/GaNHEMTs with high current and high f _T
  Electronics Letters, 2001
• High performance microwave power GaN/AlGaN MODFETsgrown by RF-assisted MBE
  Electronics Letters, 2000
• GaN/AlGaN high electron mobility transistors withf _τ of 110 GHz
  Electronics Letters, 2000
• High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
  IEEE Electron Device Letters, 1999