Clamping of the linewidth enhancement factor in narrow quantum-well semiconductor lasers
- 14 April 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (16) , 2277-2279
- https://doi.org/10.1063/1.123823
Abstract
The linewidth enhancement factor in single quantum-well graded index separate confinement heterostructure semiconductor lasers is investigated theoretically and experimentally. For thin wells, a small linewidth enhancement factor is obtained which clamps with increasing carrier density, in contrast to the monotonous increase observed for thicker wells. Microscopic many-body calculations reproduce the experimental observations attributing the clamping to excitation dependent gain shifts and the influence of the population of off-resonant states on the refractive index.Keywords
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