Anomalous Resistivity Change in B Doped Polycrystalline Si Caused by BN Formation under N2Heat-Treatment

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Abstract
B doped Si films were obtained by thermal decomposition of SiH4-BCl3-H2 gas mixture at 550°C onto thermally grown SiO2 and were heat-treated in N2 or Ar at 1100°C. The B doped polycrystalline Si exhibits an anomalous increase in resistivity for N2 heat-treatment. IMA, AES, EM and IR measurements reveal that the resistivity increase is due to decrease in B concentration in polycrystalline Si, which is caused by BN formation near the polycrystalline Si surface. The decrease rate of B concentration in polycrystalline Si and BN formation rate were measured and it is concluded that BN formation rate is determined by B and N reaction velocity.

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