A Model for Oxidation of Silicon by Oxygen

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Abstract
Insights into the transport and deposition of oxygen in silicon oxidation at 700° C have been obtained by isotope labeling and use of the ion microprobe mass analyzer for profiling. The results are consistent with interstitial diffusion of as the prime support of the interfacial oxidation reaction. Vacancy migration was observed near the surface with a very low diffusion coefficient. The interface is found to be diffuse with the interface reaction following a perfusive‐precipitation model. This model is shown to explain the profile features observed and agrees well with literature data for diffusion coefficient and rate of reaction with silicon.

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