A large-area power MOSFET designed for low conduction losses

1 June 1984

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 31 (6) , 817-820
https://doi.org/10.1109/T-ED.1984.21613

Abstract

A new power MOSFET has been fabricated that conducts 75 A with an on-state resistance of 0.012 Ω and blocks 60 V. The device may be used as a low-loss synchronous rectifier in efficient high-frequency power supplies or as a high-current power switch in applications such as emitter switching. The device design criteria include obtaining the largest possible fraction of the ideal blocking voltage and obtaining the minimum on-State resistance. Efficient utilization of the device area requires smaller feature size and shallower junction depths for low-voltage power MOSFET's than for high-voltage ones. The device reported on is 300 mils on a side and contains over 60 000 MOSFET cells in parallel. It has a gate width of more than 4 m. This device is larger and more complex than any previously reported power MOSFET. It provides an example of how power device processing techniques are approaching those of LSI circuit technology.

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