Calculation of the energy levels of a neutral vacancy and of self-interstitials in silicon
- 28 June 1976
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 9 (12) , 2319-2330
- https://doi.org/10.1088/0022-3719/9/12/015
Abstract
Calculations of the energy levels of a neutral vacancy and of self-interstitials in silicon are performed using a Green function formalism, in a tight-binding approximation. The results obtained using different parametrizations of the band structure of the perfect crystal are compared with results obtained using the Extended Huckel Theory or the pseudopotential method.Keywords
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