POINT DEFECTS AND DISLOCATION CLIMB IN III-V COMPOUNDS SEMICONDUCTORS

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Abstract
This paper reviews the low temperature dislocation climb process in III-V compounds semiconductors and points out areas in which more experimental information is needed to understand this complex problem. A dislocation climb model requiring the supersaturation of point defects of only one element of the coumpound is found to account for the main climb features. Rapid dislocation climb is attributed to recombination enhanced defect motion. Finally evidence of an interaction between the climb dislocations and a deep level donor center suggest that it might possibly be associated with the source of point defects needed for dislocation climb in Ga1-xAlxAs structures

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