Measurement of the distributed properties of GaAs-MESFETs
- 1 October 1988
- journal article
- semiconductor devices
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 65 (4) , 769-777
- https://doi.org/10.1080/00207218808945275
Abstract
Using the 4-port admittance matrix of a GaAs-MESFET, it is shown how the distributed properties such as wave impedances and propagation constants can be derived. The procedure can equally be used for any active device with 2 homogeneous electrodes. For this purpose the 4-port admittance matrix Y for an arbitrary active device is derived. Afterwards it is demonstrated how the wave properties can be extracted from the matrix Y. An example of the measurement of a GaAs-MESFET is added.Keywords
This publication has 1 reference indexed in Scilit:
- Error Probabilities for Spread-Spectrum Packet Radio with Convolutional Codes and Viterbi DecodingIEEE Transactions on Communications, 1987