Deep-level-free AlxGa1−xAs (x=0.22) layer grown by metalorganic chemical vapor deposition
- 15 May 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (20) , 2745-2747
- https://doi.org/10.1063/1.113695
Abstract
We have achieved deep‐level‐free Al0.22Ga0.78As epitaxial layers using low selenium (Se) doping (8.4×1016 cm−3) grown by metalorganic chemical vapor deposition (MOCVD). Deep levels in various Al0.22Ga0.78As layers grown on GaAs substrates were measured by deep‐level transient spectroscopy. We have found that the commonly observed oxygen contamination‐related deep levels at EC−0.53 and 0.70 eV and germanium‐related level at EC−0.30 eV in MOCVD‐grown Al0.22Ga0.78As can be eliminated by Se doping. In addition, a deep hole level located at EV+0.65 eV was found in highly Se‐doped Al0.22Ga0.78As epilayers. We suggest that low Se doping (17 cm−3) produces a passivation effect and then deactivates other deep levels in Al0.22Ga0.78As.Keywords
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