OPTICAL CHARACTERIZATION BY ELLIPSOMETRY – A PROSPECTIVE

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Abstract
Submonolayer and microstructural sensitivity, intrinsic accuracy, high energy resolution, and the capability of obtaining data in any transparent ambient make ellipsometry a useful technique for addressing a number of problems in solids, interfaces, and thin films. This paper covers topics concerned with deviations from sample perfection : effective medium theory, limit theorems, methods of obtaining accurate dielectric function spectra on real bulk and thin film samples, and the effects of microstructure on these spectra. Examples of in situ characterization of etching, cleaning, growth, and sample deposition are given, and the relation of spectroscopic ellipsometry to other characterization methods is discussed

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