Simulations for improved heterostructure Gunn oscillator based on transit region doping variations
- 15 August 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (17) , 1555-1557
- https://doi.org/10.1049/el:19910975
Abstract
A selfconsistent ensemble Monte-Carlo procedure has been implemented within an oscillator circuit to investigate the performance of heterostructure Gunn diodes. The study includes comparisons between a conventional notch device and heterojunction oscillators having two different doping profiles. It is demonstrated that suitable tailoring of the doping concentrations within the active transit region can lead to improvements in the heterostructure performance. In particular, both the oscillator frequencies and power conversion efficiencies are enhanced, without compromising reductions in the dead zone.Keywords
This publication has 1 reference indexed in Scilit:
- Transient Monte Carlo Simulation of Heterojunction Microwave OscillatorsPublished by Springer Nature ,1991