Local oxidation of silicon/CMOS: Technology/design system for LSI in CMOS
- 1 January 1974
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. XVII, 60-61
- https://doi.org/10.1109/isscc.1974.1155337
Abstract
The LOCMOS process and its ability to increase packing density and reduce cost of LSI CMOS circuits will be presented. A computer-aided layout system which can be used for wildlogic circuits using this technology will also be described.Keywords
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