Gallium-arsenide — The material and its application
- 30 June 1981
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 12 (3) , 5-8
- https://doi.org/10.1016/s0026-2692(81)80230-3
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs CrystalsBell System Technical Journal, 1980
- Ein Beitrag zur Entstehung von Spannungen und Versetzungen beim KristallwachstumCrystal Research and Technology, 1979
- Inhomogeneities in the electrical properties of gallium arsenide crystalsSolid-State Electronics, 1966
- Effect of Arsenic Pressure on Dislocation Densities in Melt-grown Gallium ArsenideNature, 1966
- Role of Oxygen in Reducing Silicon Contamination of GaAs during Crystal GrowthJournal of Applied Physics, 1963
- Growth of Silicon Crystals Free from DislocationsJournal of Applied Physics, 1959