Lifetime of excitons bound to neutral donors in high-purity GaAs
- 1 March 1972
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 10 (5) , 443-446
- https://doi.org/10.1016/0038-1098(72)90915-5
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Identification of exciton-neutral donor complexes in the photoluminescence of high purity GaAsSolid State Communications, 1970
- Direct Exciton Spectrum in Diamond and Zinc-Blende SemiconductorsPhysical Review Letters, 1970
- Lifetimes of Bound Excitons in CdSPhysical Review B, 1970
- Uniaxial-strain effects on n = 1 free-exciton and free-carrier lines in GaAsJournal of Luminescence, 1970
- Photoluminescence and Photoconductivity in Undoped Epitaxial GaAsPhysical Review B, 1969
- Bound-Exciton, Free-Exciton, Band-Acceptor, Donor-Acceptor, and Auger Recombination in GaAsPhysical Review B, 1968
- Free-Carrier and Exciton Recombination Radiation in GaAsPhysical Review B, 1968
- Probabilities for Radiative and Nonradiative Decay ofin LaPhysical Review B, 1967
- Auger Recombination of Excitons Bound to Neutral Donors in Gallium Phosphide and SiliconPhysical Review Letters, 1966
- INTERFEROMETRIC PHASE SHIFT TECHNIQUE FOR MEASURING SHORT FLUORESCENT LIFETIMESApplied Physics Letters, 1964