Ion implantation studies of polydiacetylene crystals

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Abstract
Effects of 150-keV arsenic ion implantation on polydiacetylene crystals are characterized with respect to modifications of structural, electrical, and optical properties of the parent materials. Structural modifications are studied by means of Rutherford backscattering spectrometry, Raman spectroscopy, and x-ray photoelectron spectroscopy. It is demonstrated that at low and intermediate fluences of implantation, structural changes are mainly associated with effects of the ion beam on the polymer side groups. dc resistivity measurements were performed in the 20 °K<T<290 °K temperature range and the results yield an exponential behavior of the resistivity ρ(T)=ρ0 exp(T0/T)m with the temperature-dependent exponential factor 1/2<m190 °K) and m → 1/2 at lower temperatures (T<80 °K). Absorption spectra in the visible range from ion-implanted thin crystalline films are also presented and discussed.

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