Low-Field de Haas-van Alphen Effect in Indium

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Abstract
De Haas-van Alphen data for indium, up to fields of 18 kG, have been obtained using an automatic torsion balance. The resulting extremal areas agree qualitatively with the third zone surface predicted by the free-electron model. A detailed comparison shows, however, that the experimental areas are considerably smaller than those given by the single orthogonalized plane-wave theory and that the arms are close to being cylindrical over a considerable part of their length. For certain ranges of field orientation, the amplitude of the oscillatory susceptibility is much lower than would be expected. An explanation of this effect is considered.

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