Hall effect in bulk YBa2(Cu1xZnx)3O7δ

Abstract
The Hall effect and the electrical resistivity have been measured in bulk samples having the general composition YBa2(Cu1x Zx )3 O7δ for 0<x<0.06, in the temperature range 20–300 K, and for magnetic fields up to 5 T. The linear temperature dependence of the resistivity was observed for all the doped samples between 100 and 300 K. The temperature dependence of the carrier concentration and the T2 dependence of the inverse Hall mobility [μH1(T2)] show an anomaly at a temperature around 230 K. These results are discussed in the framework of existing theories.