Selectivity of growth on patterned GaAs (311)A substrates
- 19 February 1996
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (8) , 1132-1134
- https://doi.org/10.1063/1.115736
Abstract
We report on the selectivity of growth on patterned GaAs (311)A substrates by solid-source molecular beam epitaxy. For mesa stripes oriented along the [01-1] direction, the selectivity of growth is qualitatively different from that on patterned GaAs (100) substrates with a higher growth rate on one of the side facets of the stripes. This growth mode develops a convex curved surface profile enclosing thicker wirelike regions of GaAs due to preferential migration of Ga atoms from both sides toward the sidewall leaving behind thinner regions on the adjacent mesa top and bottom areas. A mechanism for the formation of the surface profile is proposed.Keywords
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