Fabrication of GaAs coupled quantum wires on V-grooved substrate

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Abstract
We have fabricated coupled quantum wires, consisting of two GaAs quantum wires as small as 5 nm thick and 30 nm in width (15 nm in effective width) separated by a 1–3 nm thick AlGaAs barrier, using flow rate modulation epitaxy (FME) on a V-grooved substrate and observed its optical characteristics. A clear energy splitting between the fundamental coupled state and the higher-order coupled state of the coupled quantum wires was observed from the room-temperature photoluminescence. Furthermore, the splitting energy increases as the thickness of barrier decreases from 3 to 1 nm, which is predicted theoretically for coupled quantum systems.

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