Germanium Telluride Nanowires and Nanohelices with Memory-Switching Behavior
- 1 June 2006
- journal article
- Published by American Chemical Society (ACS) in Journal of the American Chemical Society
- Vol. 128 (25) , 8148-8149
- https://doi.org/10.1021/ja0625071
Abstract
We report the synthesis of single-crystalline GeTe nanowires (NWs) and nanohelices (NHs) using a vapor transport method assisted by metal catalysts. The NWs have typical diameters of 65 +/- 20 nm and lengths reaching up to 50 mum, while NHs have an average helix diameter of 135 +/- 30 nm, with widely varying pitches. Electron microscopy and diffraction measurements show that these NWs and NHs are single crystalline and exhibit a rhombohedral structure. The devices incorporating individual GeTe NWs exhibit nonvolatile resistance changes associated with voltage-driven crystalline-amorphous transitions, suggesting that these NWs can be the basis of an electrically driven nonvolatile memory.Keywords
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