Fractal renewal processes as a model of charge transport in amorphous semiconductors
- 15 July 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 46 (3) , 1816-1819
- https://doi.org/10.1103/physrevb.46.1816
Abstract
We construct two relatively simple fractal renewal processes that provide a framework for understanding charge transport in amorphous semiconductors. These processes exhibit fractal behavior, with power spectral densities that vary as 1/, deriving from interevent-time probability density functions that themselves decay in a power-law fashion.
Keywords
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