Carrier density dependence of refractive index in AlGaAs semiconductor lasers
- 1 September 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 16 (9) , 910-911
- https://doi.org/10.1109/jqe.1980.1070603
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Oscillation properties of AlGaAs DH lasers with an external gratingIEEE Journal of Quantum Electronics, 1980
- Dynamic properties of semiconductor lasersJournal of Applied Physics, 1979
- Lateral transverse mode instability and its stabilization in stripe geometry injection lasersIEEE Journal of Quantum Electronics, 1979
- Filaments as optical waveguides in gallium-arsenide lasersElectronics Letters, 1972
- A theory for filamentation in semiconductor lasers including the dependence of dielectric constant on injected carrier densityOptical and Quantum Electronics, 1972