Brillouin Scattering in Layered Semiconductors using Microprocessor-controlled Fabry-Perot Interferometer

Abstract
A microprocessor-controlled multipassed Fabry-Perot interferometer has been developed for high-resolution and high-contrast Brillouin scattering spectroscopy. Using this interferometer, Brillouin scattering experiments have been carried out for GaSe1-x S x mixed crystals having layered structures. Specific features of Brillouin scattering in the layered crystals were presented. Anomalous discontinuities of elastic constants of C 44 and C 33, related to the shearing and stretching force constants, have been found at the compositional ratios x≃0 and x≃0.4, which are related to the ε-γ and γ-β polytype transformations.

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