Nuclear Study of the Fluorine Contamination of Tantalum by Various Polishing Procedures and of Its Behavior during Subsequent Anodic Oxidation

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Abstract
The fixation of fluorine in the film left on tantalum by chemical polishing in a mixture was studied using microanalysis by the nuclear reactions . Typically of fluorine is found in films containing of oxygen. Leaching in boiling water decreases the amount of fluorine by about 50%. On the other hand, the dissolution of these films in a saturated 40% HF solution reduces the fluorine contamination to less than . Hence this double chemical treatment appears to be an effective procedure to obtain low fluorine contaminations on polished tantalum. Leached samples were anodically oxidized in a 5% ammonium citrate aqueous solution up to 90 V at 1 mA/cm2. It was found both by dissolution techniques and by the observation of the 872 keV narrow resonance of the reaction, that, after oxide growth, the fluorine remains near the metal‐oxide interface. The oxide growth laws for the various surface preparation procedures described were investigated. The presence of F19 on the surface of tantalum seems to have little influence on the growth laws; the small changes induced are discussed in detail.

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