Direct measurements of heterobarrier leakage currentand modal gainin 2.3 µm double QW p -substrate InGaAsSb/AlGaAsSbbroad area lasers
- 18 February 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (4) , 298-299
- https://doi.org/10.1049/el:19990242
Abstract
The heterobarrier hole leakage current and modal gain for GaSb-based lasers have been measured for the first time. It is shown that this leakage current is not a factor limiting high temperature operation of the device. Significant broadening of the optical gain with increasing temperature is demonstrated.Keywords
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