A 32*32 two-dimensional photodetector array using a-Si pin photodiodes and poly-Si TFTs integrated on a transparent substrate
- 1 January 1992
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 685-688
- https://doi.org/10.1109/iedm.1992.307452
Abstract
We have designed, fabricated, and characterized a 32*32 two-dimensional photodetector array using amorphous silicon (a-Si) pin photodiodes and polysilicon (poly-Si) TFTs integrated on a transparent substrate. This work demonstrates the feasibility of a light-transmitting two-dimensional photodetector array for use in parallel optoelectronic systems such as free-space photonic switching systems.Keywords
This publication has 8 references indexed in Scilit:
- New free-space optical switching network based on cascaded-beam shiftersPublished by SPIE-Intl Soc Optical Eng ,1993
- Optical beam-shifter module with high extinction ratio for 1024-input-port optical-switching networkPublished by SPIE-Intl Soc Optical Eng ,1993
- Recrystallization of amorphous silicon films deposited by low-pressure chemical vapor deposition from Si2H6 gasJournal of Applied Physics, 1991
- Characteristics of p-i junction amorphous silicon stripe-type photodiode array and its application to contact image sensorIEEE Transactions on Electron Devices, 1990
- Scale Estimation of a Two-Dimensional Optical Concentrator Using Position ShiftersPublished by Springer Nature ,1990
- High-Quality Gate-Oxide Films for Low-Temperature Fabricated Poly-Si TFTsMRS Proceedings, 1989
- Performance of a high-resolution contact-type linear image sensor with a-Si:H/a-SiC:H heterojunction photodiodesIEEE Transactions on Electron Devices, 1989
- The Effects of Oxygen‐Argon Mixing on Properties of Sputtered Silicon Dioxide FilmsJournal of the Electrochemical Society, 1987