Large third-order optical nonlinearity of nanometer-sized amorphous semiconductor: Phosphorous colloids formed in SiO2 glass by ion implantation
- 7 December 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (23) , 2747-2749
- https://doi.org/10.1063/1.108077
Abstract
This article reports large nonlinear susceptibility χ(3) of nanometer‐sized particles of amorphous phosphorus. Nanocomposites of amorphous red phosphorous colloid particles (3–5 nm in diameter) and SiO2 glasses have been fabricated by ion implantation technique. Silica glasses implanted at an acceleration voltage of 180 keV to a dose of 5×1017 P+ ions/cm2 shows χ(3) of ∼1×10−6 esu, which is comparable to quantum‐sized crystals of semiconductors such as CuCl and CdS1−xSex. This is the first finding that quantum dots of amorphous semiconductors embedded in dielectrics exhibits such a large χ(3).Keywords
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