A planarized SiO₂interlayer dielectric with bias-CVD

• 1 March 1987
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
• Vol. 34  (3) , 615-620
• https://doi.org/10.1109/t-ed.1987.22971

Abstract

Keywords

• SURFACES
• GEOMETRY
• ETCHING
• PLANARIZATION
• ARGON
• RADIO FREQUENCY