AN OPTOELECTRONIC COLD CATHODE USING AN AlxGa1−xAs HETEROJUNCTION STRUCTURE
- 1 May 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (9) , 359-362
- https://doi.org/10.1063/1.1653225
Abstract
An efficient optoelectronic cold cathode has been made which includes a Si‐compensated AlxGa1−xAs electroluminescent diode covered with an absorbing p‐type GaAs layer having a negative electron affinity surface. This structure is designed to minimize current crowding in the vicinity of the Ohmic contact. An over‐all efficiency of 1.1×10−3 (current emitted into vacuum/diode current) has been achieved. This represents a factor of 102–103 improvement over previous p‐n junction or optically coupled cold cathode structures.Keywords
This publication has 7 references indexed in Scilit:
- The Schottky barrier cold cathodeSolid-State Electronics, 1969
- ELECTRON EMISSION FROM A ``COLD-CATHODE'' GaAs p-n JUNCTIONApplied Physics Letters, 1969
- Properties of Efficient Silicon-Compensated AlxGa1−xAs Electroluminescent DiodesJournal of Applied Physics, 1969
- ELECTRON EMISSION FROM THE SCHOTTKY BARRIER STRUCTURE ZnS:Pt:CsApplied Physics Letters, 1968
- An opto-electronic cold cathode for cathode ray tubesSolid-State Electronics, 1968
- The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1966
- Cold cathode electron emitterSolid-State Electronics, 1963