Growth condition studies of pseudomorphic InGaAs/GaAs strained layer structures and InGaAs/AlGaAs high electron mobility transistor layer properties
- 1 March 1989
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 7 (2) , 361-364
- https://doi.org/10.1116/1.584751
Abstract
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