High-resolution electron microscopy of the initial stages of CoSi2 formation on Si(111)
- 3 March 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 168 (1-3) , 751-763
- https://doi.org/10.1016/0039-6028(86)90907-6
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Cobalt disilicide epitaxial growth on the silicon (111) surfacePhysical Review B, 1984
- Direct determination of atomic structure at the epitaxial cobalt disilicide on (111) Si interface by ultrahigh resolution electron microscopyApplied Physics Letters, 1982
- Interactions in the Co/Si thin-film system. I. KineticsJournal of Applied Physics, 1978
- First phase nucleation in silicon–transition-metal planar interfacesApplied Physics Letters, 1976
- Cobalt silicide layers on Si. I. Structure and growthJournal of Applied Physics, 1975