Elastic constants and Raman frequencies of heavily doped Si under uniaxial stress
- 15 March 1973
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 12 (6) , 553-556
- https://doi.org/10.1016/0038-1098(73)90656-x
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type SemiconductorsPhysical Review B, 1972
- Piezo-Electroreflectance in Ge, GaAs, and SiPhysical Review B, 1968