Reprogrammable logic array using M-R elements

• 1 January 1990
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
• Vol. 26  (5) , 2828-2830
• https://doi.org/10.1109/20.104890

Abstract

Keywords

• CMOS INTEGRATED CIRCUITS
• INTEGRATED LOGIC CIRCUITS
• LOGIC ARRAYS
• MAGNETIC FILM STORES
• MAGNETORESISTANCE
• RANDOM-ACCESS STORAGE
• 2 MICRON
• 20 NS
• CMOS
• RAM
• DELAY TIME
• MAGNETORESISTIVE MEMORIES
• NONVOLATILE CONFIGURATION STORAGE
• PROTOTYPE LAYOUT
• RADIATION HARDNESS
• RAPID INFINITE REPROGRAMMABILITY
• REPROGRAMMABLE LOGIC ARRAY
• SENSE AMPLIFIER
• SIMULATION