The poly-silicon insulated-gate field-effect transistor
- 1 February 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. ED-13 (2) , 290-291
- https://doi.org/10.1109/t-ed.1966.15682
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- The minimization of parasitics in integrated circuits by dielectric isolationIEEE Transactions on Electron Devices, 1965
- Characteristics of the metal-Oxide-semiconductor transistorsIEEE Transactions on Electron Devices, 1964
- An improved dielectric isolation technique and its applications in integrated devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1964