The Effective Ionization Rate for Hot Carriers in GaAs†
- 1 June 1966
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 20 (6) , 535-543
- https://doi.org/10.1080/00207216608937887
Abstract
The effective hot carrier ionization rate in the field range of 2.8-3.6 × 105 v/cm has been determined in epitaxial GaAs p+-n junctions on the basis of photomultiplication measurements (on the assumption of equal hole and electron ionization rates). A fit of the ionization rate data to the theory of Baraff yields a value of λ equal to 43 Å and an ionization energy value of 1.8 ev. The ionization rate was also calculated from previously published data relating breakdown voltage to impurity concentration in step junctions and data relating breakdown voltage to impurity gradient in graded junctions. The values obtained by all three methods are in good agreement.Keywords
This publication has 12 references indexed in Scilit:
- The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1966
- Charge Multiplication in GaP p-n JunctionsJournal of Applied Physics, 1965
- Ionization Rates of Holes and Electrons in SiliconPhysical Review B, 1964
- Breakdown Voltage of Graded Gallium Arsenide p-n JunctionsJournal of Applied Physics, 1963
- Avalanche Effects in Silicon p—n Junctions. II. Structurally Perfect JunctionsJournal of Applied Physics, 1963
- Avalanche Breakdown in Gallium ArsenideJunctionsPhysical Review B, 1962
- Distribution Functions and Ionization Rates for Hot Electrons in SemiconductorsPhysical Review B, 1962
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961
- Breakdown in Silicon pn Junctions†Journal of Electronics and Control, 1959
- Avalanche Breakdown in SiliconPhysical Review B, 1954