LPVPE-grown silicon camel diodes

11 September 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (19) , 994-996
https://doi.org/10.1049/el:19860680

Abstract

Low-pressure vapour-phase epitaxy (LPVPE) was applied to fabricate multilayer structures like camel diodes. Using in situ doping and selective growth, camel diodes with good ideality factors (1.08–1.2) and low generation-recombination currents were realised.

Keywords

SELECTIVE GROWTH
LPVPE-GROWN SILICON CAMEL DIODES
CAMEL DIODES
MULTILAYER STRUCTURES
GENERATION-RECOMBINATION CURRENTS
LOW-PRESSURE VAPOUR PHASE EPITAXY
IDEALITY FACTORS
IN SITU DOPING

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