1.5 μm region InP/GaInAsP buried heterostructure lasers on semi-insulating substrates

8 January 1981

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 17 (1) , 12-14
https://doi.org/10.1049/el:19810010

Abstract

InP/GaInAsP buried heterostructure (BH) lasers for the 1.5 μm region have been fabricated on semi-insulating InP substrates. The threshold current of the lasers is as low as 38 mA under CW operation at 25°C, which is nearly the same as for BH lasers fabricated on n-type InP substrates.

Keywords

THRESHOLD CURRENT
SEMI INSULATING SUBSTRATE
III-V SEMICONDUCTORS
INP/GAINASP BURIED HETEROSTRUCTURE LASERS
P-N HETEROJUNCTIONS

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