The impact of pseudomorphic AlAs spacer layers on the gate leakage current of InAl As/InGaAs heterostructure field‐effect transistors
- 20 February 1996
- journal article
- research article
- Published by Wiley in Microwave and Optical Technology Letters
- Vol. 11 (3) , 125-128
- https://doi.org/10.1002/(sici)1098-2760(19960220)11:3<125::aid-mop4>3.3.co;2-s
Abstract
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